the information in this document is subject to change without notice. before using this document, please confirm that this is the latest version. not all products and/or types are available in every country. please check with an nec electronics sales representative for availability and additional information. mos field effect transistor np82n04pdg switching n-channel power mos fet data sheet document no. d18396ej1v0ds00 (1st edition) date published september 2006 ns cp(k) printed in japan 2006 description the np82n04pdg is n-channel mos field effect transis tor designed for high current switching applications. ordering information part number lead plating packing package np82n04pdg-e1-ay NP82N04PDG-E2-AY pure sn (tin) tape 800 p/reel to-263 (mp-25zp) typ. 1.5 g features ? super low on-state resistance r ds(on)1 = 3.5 m max. (v gs = 10 v, i d = 41 a) r ds(on)2 = 8.0 m max. (v gs = 4.5 v, i d = 41 a) ? low c iss c iss = 6000 pf typ. absolute maximum ratings (t a = 25 c) drain to source voltage (v gs = 0 v) v dss 40 v gate to source voltage (v ds = 0 v) v gss 20 v drain current (dc) (t c = 25 c) i d(dc) 82 a drain current (pulse) note1 i d(pulse) 328 a total power dissipation (t c = 25 c) p t1 143 w total power dissipation (t a = 25 c) p t2 1.8 w channel temperature t ch 175 c storage temperature t stg ? 55 to +175 c repetitive avalanche current note2 i ar 43 a repetitive avalanche energy note2 e ar 185 mj notes 1. pw 10 s, duty cycle 1% 2. t ch 150c, v dd = 20 v, r g = 25 , v gs = 20 0 v thermal resistance channel to case thermal resistance r th(ch-c) 1.05 c/w channel to ambient thermal resistance r th(ch-a) 83.3 c/w (to-263)
data sheet d18396ej1v0ds 2 np82n04pdg electrical characteristics (t a = 25 c) characteristics symbol test conditions min. typ. max. unit zero gate voltage drain current i dss v ds = 40 v, v gs = 0 v 1 a gate leakage current i gss v gs = 20 v, v ds = 0 v 100 na gate to source threshold voltage v gs(th) v ds = v gs , i d = 250 a 1.4 1.8 2.5 v forward transfer admittance | y fs | v ds = 10 v, i d = 41 a 20 47 s drain to source on-state resistance r ds(on)1 v gs = 10 v, i d = 41 a 2.9 3.5 m r ds(on)2 v gs = 4.5 v, i d = 41 a 4.1 8.0 m input capacitance c iss v ds = 25 v 6000 9000 pf output capacitance c oss v gs = 0 v 580 870 pf reverse transfer capacitance c rss f = 1 mhz 370 670 pf turn-on delay time t d(on) v dd = 20 v, i d = 41 a 26 60 ns rise time t r v gs = 10 v 68 170 ns turn-off delay time t d(off) r g = 0 73 150 ns fall time t f 11 30 ns total gate charge q g v dd = 32 v 100 150 nc gate to source charge q gs v gs = 10 v 19 nc gate to drain charge q gd i d = 82 a 32 nc body diode forward voltage v f(s-d) i f = 82 a, v gs = 0 v 0.9 1.5 v reverse recovery time t rr i f = 82 a, v gs = 0 v 43 ns reverse recovery charge q rr di/dt = 100 a/ s 47 nc test circuit 3 gate charge v gs = 20 0 v pg. r g = 25 50 d.u.t. l v dd test circuit 1 avalanche capability pg. d.u.t. r l v dd test circuit 2 switching time r g pg. i g = 2 ma 50 d.u.t. r l v dd i d v dd i as v ds bv dss starting t ch v gs 0 = 1 s duty cycle 1% v gs wave form v ds wave form v gs v ds 10% 0 0 90% 90% 90% v gs v ds t on t off t d(on) t r t d(off) t f 10% 10%
data sheet d18396ej1v0ds 3 np82n04pdg typical characteristics (t a = 25c) derating factor of forward bias safe operating area total power dissipation vs. case temperature dt - percentage of rated power - % 0 20 40 60 80 100 0 25 50 75 100 125 150 175 t c - case temperature - c p t - total power dissipation - w 0 20 40 60 80 100 120 140 160 0 25 50 75 100 125 150 175 t c - case temperature - c forward bias safe operating area i d - drain current - a 0.1 1 10 100 1000 0.1 1 10 100 r ds(on) limited (at v gs = 10 v) i d(pulse) i d(dc) t c = 25 c single pulse power dissipation limited dc 1 ms 10 ms 100 s v ds - drain to source voltage - v transient thermal resistance vs. pulse width r th(t) - transient thermal resistance - c/w 0.01 0.1 1 10 100 r th(ch-a) = 83.3 c/w r th(ch-c) = 1.05 c/w single pulse pw - pulse width - s 1 m 10 m 100 m 1 10 100 1000
data sheet d18396ej1v0ds 4 np82n04pdg drain current vs. drain to source voltage forward transfer characteristics i d - drain current - a 0 100 200 300 400 0 0.5 1 1.5 2 v gs = 10 v pulsed 4.5 v v ds - drain to source voltage - v i d - drain current - a 0.001 0.01 0.1 1 10 100 1000 012345 ? 55 c ? 25 c t a = 85 c 25 c 125 c 150 c v ds = 10 v pulsed 175 c v gs - gate to source voltage - v gate to source threshold voltage vs. channel temperature forward transfer admittance vs. drain current v gs(th) - gate to source threshold voltage - v 0.0 0.5 1.0 1.5 2.0 2.5 -100 0 100 200 v ds = v gs i d = 250 a t ch - channel temperature - c | y fs | - forward transfer admittance - s 0.1 1 10 100 0.1 1 10 100 v ds = 10 v pulsed t a = ? 55 c 125 c 150 c 175 c ? 25c 25c 85c i d - drain current - a drain to source on-state resistance vs. drain current drain to source on-state resistance vs. gate to source voltage r ds(on) - drain to source on-state resistance - m 0 1 2 3 4 5 6 7 1 10 100 1000 pulsed 10 v v gs = 4.5 v i d - drain current - a r ds(on) - drain to source on-state resistance - m 0 1 2 3 4 5 6 7 0 5 10 15 20 pulsed 16.4 a 41 a i d = 82 a v gs - gate to source voltage - v
data sheet d18396ej1v0ds 5 np82n04pdg drain to source on-state resistance vs. channel temperature capacitance vs. drain to source voltage r ds(on) - drain to source on-state resistance - m 0 1 2 3 4 5 6 7 8 -100 -50 0 50 100 150 200 10 v v gs = 4.5 v i d = 41 a pulsed t ch - channel temperature - c c iss , c oss , c rss - capacitance - pf 100 1000 10000 0.1 1 10 100 v gs = 0 v f = 1 mhz c iss c rss c oss v ds - drain to source voltage - v switching characteristics dynamic input/output characteristics t d(on) , t r , t d(off) , t f - switching time - ns 1 10 100 1000 0.1 1 10 100 v dd = 20 v v gs = 10 v r g = 0 t d(off) t d(on) t r t f i d - drain current - a v ds - drain to source voltage - v 0 10 20 30 40 0 20 40 60 80 100 120 0 2 4 6 8 10 12 i d = 82 a v ds v gs v dd = 32 v 20 v 8 v q g - gate charge - nc v gs - gate to source voltage - v source to drain diode forward voltage reverse recovery time vs. diode forward current i f - diode forward current - a 0.01 0.1 1 10 100 1000 0 0.5 1 1.5 0 v pulsed v gs = 10 v 4.5 v v f(s-d) - source to drain voltage - v t rr - reverse recovery time - ns 10 100 0.1 1 10 100 di/dt = 100 a/ s v gs = 0 v i f - diode forward current - a
data sheet d18396ej1v0ds 6 np82n04pdg package drawing (unit: mm) to-263 (mp-25zp) no plating 7.88 min. 2.54 0.75 ?.2 0.5 9.15 ?.3 8.0 typ. 2.54 ?.25 15.25 ?.5 1.35 ?.3 2 13 4 2.5 4.45 ?.2 1.3 ?.2 0.6 ?.2 0 to 8? 1. gate 2. drain 3. source 4. fin (drain) 0.025 to 0.25 0.25 10.0 ?.3 equivalent circuit source bod y diod e g ate drain remark strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred.
data sheet d18396ej1v0ds 7 np82n04pdg tape information there are two types (-e1, -e2) of tapi ng depending on the direction of the device. reel side draw-out side marking information nec pb-free plating marking 82n04 dg abbreviation of part number lot code recommended soldering conditions the np82n04pdg should be soldered and mounted under the following recommended conditions. for soldering methods and conditions other than thos e recommended below, please contact an nec electronics sales representative. for technical information, see the following website. semiconductor device mount manual (http://www.necel.com/pkg/en/mount/index.html) soldering method soldering conditions recommended condition symbol infrared reflow maximum temperature (package's surface temperature): 260 c or below time at maximum temperature: 10 seconds or less time of temperature higher than 220 c: 60 seconds or less preheating time at 160 to 180 c: 60 to 120 seconds maximum number of reflow processes: 3 times maximum chlorine content of rosin flux (percentage mass): 0.2% or less ir60-00-3 partial heating maximum temperature (pin temperature): 350 c or below time (per side of the device): 3 seconds or less maximum chlorine content of rosin flux: 0.2% (wt.) or less p350 caution do not use different soldering methods together (except for partial heating).
np82n04pdg the information in this document is current as of september, 2006. the information is subject to change without notice. for actual design-in, refer to the latest publications of nec electronics data sheets or data books, etc., for the most up-to-date specifications of nec electronics products. not all products and/or types are available in every country. please check with an nec electronics sales representative for availability and additional information. no part of this document may be copied or reproduced in any form or by any means without the prior written consent of nec electronics. nec electronics assumes no responsibility for any errors that may appear in this document. nec electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of nec electronics products listed in this document or any other liability arising from the use of such products. no license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of nec electronics or others. descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. the incorporation of these circuits, software and information in the design of a customer's equipment shall be done under the full responsibility of the customer. nec electronics assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. while nec electronics endeavors to enhance the quality, reliability and safety of nec electronics products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. to minimize risks of damage to property or injury (including death) to persons arising from defects in nec electronics products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment and anti-failure features. nec electronics products are classified into the following three quality grades: "standard", "special" and "specific". the "specific" quality grade applies only to nec electronics products developed based on a customer- designated "quality assurance program" for a specific application. the recommended applications of an nec electronics product depend on its quality grade, as indicated below. customers must check the quality grade of each nec electronics product before using it in a particular application. the quality grade of nec electronics products is "standard" unless otherwise expressly specified in nec electronics data sheets or data books, etc. if customers wish to use nec electronics products in applications not intended by nec electronics, they must contact an nec electronics sales representative in advance to determine nec electronics' willingness to support a given application. (note) ? ? ? ? ? ? m8e 02. 11-1 (1) (2) "nec electronics" as used in this statement means nec electronics corporation and also includes its majority-owned subsidiaries. "nec electronics products" means any product developed or manufactured by or for nec electronics (as defined above). computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots. transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support). aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. "standard": "special": "specific":
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